Apparatus and method for semiconductor fabrication

ABSTRACT

A method for fabricating a semiconductor device, including the steps of: providing a substrate having an etch stop layer formed thereon; forming a preliminary stacked structure on the etch stop layer, the preliminary stacked structure including a lower sacrifice layer contacting the etch stop layer, a support layer, and an upper sacrifice layer; forming a hole penetrating the preliminary stacked structure and the etch stop layer; forming a conductive pattern in the hole; removing the upper sacrifice layer and a portion of the support layer; removing the lower sacrifice layer; forming a first conductive layer covering the conductive pattern; and forming a dielectric layer covering the first conductive layer, a remaining portion of the support layer, and the etch stop layer.

FIELD

The present disclosure generally relates to an apparatus and a methodfor use in semiconductor fabrication. More specifically, the presentdisclosure relates to processing a substrate for fabricating asemiconductor device.

BACKGROUND

Due to a rapid and widespread usage of information devices, the need formemory semiconductor devices is expanding. As device scale reduces,memory semiconductor devices require high storage capacitance and fastoperation speed. Process technology has been focusing on improving theresponse speed, reliability and integration of memory devices. Forexample, dynamic random access memory (DRAM) devices generally includeone access transistor and one storage capacitor. Boron phosphoroussilicate glass (BPSG) and/or phosphorous silicate glass (PSG) films havebeen used as structural films to form the capacitor. Normally,deposition of the BPSG/PSG film on a substrate is performed bylow-pressure chemical vapor deposition (LPCVD), in which chemicalreactants are dispensed through a showerhead onto the substrate.

SUMMARY

In view of above, the present disclosure is directed to processing asubstrate for fabricating a semiconductor device.

An implementation of the present application is directed to an apparatusfor processing a substrate. The apparatus comprises a processing chamberand a showerhead. The showerhead is in the processing chamber and has aplurality of first holes with a first size in a first zone of theshowerhead, a plurality of second holes with a second hole size in asecond zone of the showerhead, and a plurality of third holes with athird hole size in a third zone of the showerhead. The first hole sizeis different from the second hole size. The first zone is surrounded bythe second zone. An area of the first zone is larger than an area of thesecond zone.

BRIEF DESCRIPTION OF THE DRAWINGS

The drawings are directed to a manner in which the recited features ofthe present disclosure can be understood in detail, and to a moreparticular description of the disclosure briefly summarized above whichmay be had by reference to implementation, some of which are illustratedin the drawings. It is to be noted, however, that the drawingsillustrate only typical implementation of this disclosure and aretherefore not to be considered limiting of its scope, for the disclosuremay relate to other equally effective implementation.

FIG. 1 illustrates an apparatus for processing a substrate according toan example implementation of the present disclosure;

FIG. 2 illustrates a top view of a showerhead according to an exampleimplementation of the present disclosure;

FIG. 3 illustrates a top view of a showerhead according to an exampleimplementation of the present disclosure;

FIG. 4 illustrates an apparatus for processing a substrate according toan example implementation of the present disclosure;

FIG. 5 illustrates a top view of a showerhead according to an exampleimplementation of the present disclosure;

FIG. 6 illustrates a top view of a showerhead according to an exampleimplementation of the present disclosure;

FIG. 7 illustrates an apparatus for processing on a substrate accordingto an example implementation of the present disclosure;

FIG. 8 illustrates a top view of a showerhead according to an exampleimplementation of the present disclosure; and

FIG. 9 illustrates a top view of a showerhead according to an exampleimplementation of the present disclosure;

FIG. 10 is a graph illustrating compared concentrations of dopants offilms according to an example implementation of the present disclosure;and

FIG. 11 is a flowchart illustrating a method for processing a substrateaccording to an example implementation of the present disclosure.

It is to be noted, however, that the appended drawings illustrate onlyexample implementations of this disclosure and are therefore not to beconsidered limiting of its scope, for the disclosure may relate to otherequally effective implementation.

It should be noted that these figures are intended to illustrate thegeneral characteristics of methods, structure and/or materials utilizedin certain example implementation and to supplement the writtendescription provided below. These drawings are not, however, to scaleand may not precisely reflect the precise structural or performancecharacteristics of any given implementation, and should not beinterpreted as defining or limiting the range of values or propertiesencompassed by example implementation. For example, the relativethicknesses and positioning of layers, regions and/or structuralelements may be reduced or exaggerated for clarity. The use of similaror identical reference numbers in the various drawings is intended toindicate the presence of a similar or identical element or feature.

DETAILED DESCRIPTION

The present disclosure will now be described more fully hereinafter withreference to the accompanying drawings, in which example implementationof the disclosure are shown. This disclosure may, however, beimplemented in many different forms and should not be construed aslimited to the example implementation set forth herein. Rather, theseexample implementations are provided so that this disclosure will bethorough and complete, and will fully convey the scope of the disclosureto those skilled in the art. Like reference numerals refer to likeelements throughout.

The terminology used herein is for the purpose of describing particularexample implementation only and is not intended to be limiting of thedisclosure. As used herein, the singular forms “a”, “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises” and/or “comprising,” or “includes” and/or “including” or“has” and/or “having” when used herein, specify the presence of statedfeatures, regions, integers, actions, operations, elements, and/orcomponents, but do not preclude the presence or addition of one or moreother features, regions, integers, actions, operations, elements,components, and/or groups thereof.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure belongs. It willbe further understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and thepresent disclosure, and will not be interpreted in an idealized oroverly formal sense unless expressly so defined herein.

Example implementations of the present disclosure are directed to anapparatus for processing a wafer/substrate. The apparatus may be adeposition apparatus, such as a chemical vapor deposition (CVD)apparatus, an etching apparatus, or a cleaning apparatus. The apparatusincludes a showerhead, e.g., showerheads 200, 300, 500, 600, 800, and900 in FIGS. 2, 3, 5, 6, 8, and 9 , respectively. The showerhead has twoor more zones, each of which is formed with a plurality of holes orchannels through which gas/dopants may flow. The sizes of the holes inthe showerhead of the present disclosure are varied from one zone toanother. The construction as such permits even distribution of gasflowing from the showerhead of the present disclosure, allowingformation of a film having a substantially uniform thickness orconcentration of dopants on a substrate.

The description will be made as to the example implementations inconjunction with the accompanying drawings in FIGS. 1 to 11 . Referencewill be made to the drawing figures to describe the present disclosurein detail, wherein depicted elements are not necessarily shown to scaleand wherein like or similar elements are designated by same or similarreference numeral through the several views and same or similarterminology.

FIG. 1 illustrates an apparatus 100 for processing a substrate 104according to an example implementation of the present disclosure. Asillustrated in FIG. 1 , the apparatus 100 includes a processing chamber102, a substrate support 106 (e.g., a chuck) positioned in a bottom or asubstrate processing zone of the processing chamber 102 and configuredto support a substrate 104 thereon, a gas inlet 108 coupled to a topsurface 118 of the processing chamber 102 for permitting gas (such asphosphine, phosphorous) to flow therethrough, and a showerhead 110placed under the gas inlet 108. In certain implementations, a blockerplate (not shown) is mounted between the showerhead 110 and the topsurface 118 of the processing chamber 102.

The top surface 118 of the processing chamber 102 has opposite first andsecond end portions 120, 122 and a middle portion 124 between the firstand second end portions 120, 122. In an example implementation of thepresent disclosure, the gas inlet or gas line 108 is mounted at themiddle portion 124 of the top surface 118 of the processing chamber 102.A first processing gas 112 may flow from a gas source (not shown),through the gas inlet 108, and to the showerhead 110 such that the firstprocessing gas 112 is unevenly distributed over the showerhead 110. Thatis, the amount of the first processing gas 112 flowing to the showerhead110 is larger at the center of the showerhead 110 than the edge of theshowerhead 110.

The showerhead 110 includes a plurality of through holes 116 that allowthe first processing gas 112 to flow therethrough. A second processinggas 114 flows from the showerhead 110 and is distributed over thesubstrate 104 when the first processing gas 112 flows through theshowerhead 110. As will be described below, the showerhead 110 of thepresent disclosure permits even distribution of the second processinggas 114 (such as phosphine, phosphorous) over the substrate 104,allowing a film (e.g., borophosphosilicate (BSPG) or phosphosilicateglass (PSG)) with a substantially uniform thickness to be formed on thesubstrate 104.

In the conventional showerheads, the diameters of all of holes in theshowerhead are identical to each other. This causes a larger amount ofthe second processing gas to flow from the center of the showerhead thanthe edge of the showerhead. This is because the first processing gas,which passes through the gas inlet mounted at the middle portion of thetop surface of the processing chamber, has to travel farther to reachthe edge of the showerhead than the center of the showerhead. In otherwords, the second processing gas 114 flowing from the conventionalshowerhead is unevenly distributed over the substrate. Consequently, thethickness of the film or the concentration of the dopant of the filmdeposited on the substrate is not uniform. That is, the thickness of thedeposited film or the concentration of the dopant of the deposited filmmay peak at the substrate center and gradually decrease toward thesubstrate edge.

FIG. 10 is a graph illustrating compared concentrations of dopants offilms 1010 and 1020 according to an example implementation of thepresent disclosure. As illustrated in FIG. 10 , based on experimentalresults, when a first film 1010 is formed over a first substrate usingthe apparatus that includes the conventional showerhead and a secondfilm 1020 is formed over a second substrate using the apparatus of thepresent disclosure, the graph of the concentration of the dopant of thesecond film 1020 is flatter than the graph of the concentration of thedopant of the first film 1010. That is, unlike the concentration of thedopant of the film 1010, which peaks at the substrate center andgradually decreases toward the substrate edge, the concentration of thedopant of the film 1020 at the substrate center is substantially thesame as the concentration of the dopant of the film 1020 at thesubstrate edge. Indeed, the processing gas that flow from the showerheadof the present disclosure is evenly distributed over the substrate.

In various implementations of the present disclosure, the showerhead 110of the present disclosure is divided into different zones. The sizes(e.g., widths or diameters) of the holes or channels 116 in theshowerhead 110 are varied from one zone to another. For example, theshowerhead 110 may be divided into a first zone at a center of theshowerhead 110 and a second zone surrounding the first zone. The holes116 in the first zone of the showerhead 110 may have a smaller hole sizethan the holes 116 in the second zone of the showerhead 110, allowing aneven distribution of the second processing gas 114 flowing from theshowerhead 110 over the substrate 104.

FIG. 2 illustrates a top view of a showerhead 200 of the apparatus 100according to an example implementation of the present disclosure. Asillustrated in FIG. 2 , the holes in the showerhead 200 are grouped intoa zone 210 at a center of the showerhead 200 and a zone 212 surroundingthe zone 210. The zones 210, 212 define an interface 214 therebetween.In various implementations, the interface 214 is circular. In otherimplementations, the interface 214 is polygonal (e.g., triangular orrectangular).

In this example implementation, the sizes (e.g., widths or diameters) ofthe holes in the zone 210 are identical to each other. The sizes (e.g.,widths or diameters) of the holes in the zone 212 are identical to eachother. The holes in the zone 212 have a larger hole size than the holesin the zone 210. For example, the sizes of the holes in the zone 210 isfrom about 0.68 mm to about 0.72 mm. The term “about” means ±0.02 mm.

In various implementations, the widths of the zone 210 is about 210 mmto 250 mm. The zone 210 is generally circular shape and has a diameter(D1) from about 210 mm to about 250 mm. The term “about” means ±20 mm.The size of the holes in the zone 212 is from about 0.72 mm to about0.74 mm. The term “about” means ±0.02 mm. In other implementations, thezone 210 has a diameter (D1) from about 220 mm to about 300 mm. The term“about” means ±10 mm.

The zone 212 is generally ring shape and has widths (W1, W2) at oppositesides thereof. In this example implementation, the area of zone 210 isgreater than the area of the zone 212. In various implementations, thefirst width (W1) of the zone 212 is substantially equal to the secondwidth (W2) of the zone 212. In other implementations, the first width(W1) of the zone 212 is different from, i.e., larger or smaller than,the second width (W2) of the zone 212. In various implementations, theopen area of the zone 210 is from about 800 mm2 to about 1000 mm2. Theopen area of the zone 212 is from about 200 mm2 to about 300 mm2. Theterm “open area” means how much of the area is occupied by the holes. Invarious implementations, each of the holes has cross-sections (e.g., acircular cross-section). The summation of the areas of thecross-sections of the holes in the zone 210 is from about 800 mm2 toabout 1000 mm2. The summation of the areas of the cross-sections of theholes in the zone 212 is from about 200 mm2 to about 300 mm2.

FIG. 3 illustrates a top view of a showerhead 300 of the apparatus 100according to an example implementation of the present disclosure. Asillustrated in FIG. 3 , the showerhead 300 differs from the showerhead200 in that the showerhead 300 is divided into three zones 310, 312,314, each of which is formed with a plurality of holes. In this exampleimplementation, the sizes (e.g., widths or diameters) of the holes inthe zone 310 are identical to each other. The sizes (e.g., widths ordiameters) of the holes in the zone 312 are identical to each other. Thesizes (e.g., widths or diameters) of the holes in the zone 314 areidentical to each other. The size of the holes in the zone 314 is largerthan the size of the holes in the zone 312. The size of the holes in thezone 312 is larger than the size of the holes in the zone 310. Forexample, the diameter of the hole size in the zone 310 is from about0.68 mm to about 0.72 mm. The term “about” means ±0.02 mm.

The zone 310 is generally circular shape and has a diameter (D2) fromabout 90 mm to about 100 mm. The term “about” means ±10 mm. In variousimplementations, the open area of the zone 310 is from about 700 mm2 toabout 900 mm2. The term “open area” means how much of the area isoccupied by the holes. In various implementations, each of the holes hascross-sections (e.g., a circular cross-section). The summation of theareas of the cross-sections of the holes in the zone 310 is from about700 mm2 to about 900 mm2.

The hole size in the zone 312 is from about 0.72 mm to about 0.74 mm.The term “about” means ±0.02 mm. The zone 312 is generally ring shapeand has widths (W3, W4) at opposite sides thereof. In variousimplementations, the width (W3) of the zone 312 is substantially equalto the width (W4) of the zone 312. In other implementations, the width(W3) of the zone 312 is different from, i.e., greater or smaller than,the width (W4) of the zone 312. In this example implementation, the areaof the zone 312 is smaller than the area of the zone 310. In variousimplementations, the open area of the zone 312 is from about 100 mm2 toabout 200 mm2. The term “open area” means how much of the area isoccupied by the holes. In various implementations, each of the holes hascross-sections (e.g., a circular cross-section). The summation of theareas of the cross-sections of the holes in the zone 312 is from about100 mm2 to about 200 mm2.

The hole size in the zone 314 is from about 0.74 mm to about 0.76 mm.The term “about” means ±0.02 mm. The zone 314 is generally ring shapeand has widths (W5, W6) at opposite sides thereof. In variousimplementations, the width (W5) of the zone 314 is substantially equalto the width (W6) of the zone 314. In other implementations, the width(W5) of the zone 314 is different from, i.e., greater or smaller than,the width (W6) of the zone 314. In various implementations, the area ofthe zone 312 is smaller than the area of the zone 314. In variousimplementations, the area of the zone 312 is substantially equal to thearea of the zone 314. In various implementations, the open area of thezone 314 is from about 200 mm2 to about 300 mm2. The term “open area”means how much of the area is occupied by the holes. In variousimplementations, each of the holes has cross-sections (e.g., a circularcross-section). The summation of the areas of the cross-sections of theholes in the zone 314 is from about 200 mm2 to about 300 mm2.

In various implementations, one of the widths (W5, W6) of the zone 314is smaller or greater than one of the widths (W3, W4) of the zone 312.

FIG. 4 illustrates an apparatus 400 for processing a substrate 404according to an example implementation of the present disclosure. Asillustrated in FIG. 4 , the apparatus 400 differs from the apparatus 100in that the gas inlet 408 of the apparatus 400 is mounted at a sidewall418 of the processing chamber 402. A first processing gas 412 may flowfrom a gas source (not shown), through the gas inlet 408, and to theshowerhead 410 such that the first processing gas 412 is unevenlydistributed over the showerhead 410. That is, the amount of firstprocessing gas 412 flowing to the showerhead 410 is larger at a firstside 420 of the showerhead 410 than a second side 422 of the showerhead410 opposite the first side 420 of the showerhead 410.

The showerhead 410 includes a plurality of through holes 416 that allowthe first processing gas 412 to flow therethrough. A second processinggas 414 flows from the showerhead 410 and is distributed over thesubstrate 404 when the first processing gas 412 flows through theshowerhead 410. As will be described below, the showerhead 410 of thepresent disclosure permits even distribution of the second processinggas 414 (such as phosphine, phosphorous) over the substrate 404,allowing a film (e.g., BSPG or PSG) with a substantially uniformthickness to be formed on the substrate 404.

In various implementations of the present disclosure, the showerhead 410of the apparatus 400 is divided into different zones, and the sizes(e.g., widths or diameters) of the holes or channels 416 in theshowerhead 410 are varied from one zone to another. For example, theshowerhead 410 may be divided into a first zone at the first side 420 ofthe showerhead 410 and a second zone at the second side 422 of theshowerhead 410. The holes 416 in the first zone of the showerhead 410may have a smaller hole size than the holes 416 in the second zone ofthe showerhead 410, allowing an even distribution of the secondprocessing gas 414 flowing from the showerhead 410 over the substrate404.

FIG. 5 illustrates a top view of a showerhead 500 of the apparatus 400according to an example implementation of the present disclosure. Asillustrated in FIG. 5 , the holes in the showerhead 500 are grouped intoa zone 508 at a first side of the showerhead 500 and a zone 510 at asecond side of the showerhead 500 opposite the first side of theshowerhead 500. The zones 508 and 510 define an interface 504therebetween. In various implementations, the interface 504 is arcuate.In other implementations, the interface 504 is straight.

In this example implementation, the sizes (e.g., widths or diameters) ofthe holes in the zone 508 are identical to each other. The sizes (e.g.,widths or diameters) of the holes in the zone 510 are identical to eachother. The holes in the zone 510 have a larger hole size than the holesin the zone 508. For example, the size of the holes in the zone 508 isfrom about 0.68 mm to about 0.72 mm. The term “about” means ±0.02 mm.

In this example implementation, the center 514 of the showerhead 500 isinside the zone 508. In an alternative implementation, the center 514 ofthe showerhead 500 is inside the zone 510. The size of the holes in thezone 510 is from about 0.72 mm to about 0.74 mm. The term “about” means±0.02. In this example implementation, the area of the zone 508 islarger than the area of the zone 510. In various implementations, theopen area of the zone 508 is from about 800 mm2 to about 1000 mm2. Theopen area of the zone 510 is from about 200 mm2 to about 300 mm2. Theterm “open area” means how much of the area is occupied by the holes. Invarious implementations, each of the holes has cross-sections (e.g., acircular cross-section). The summation of the areas of thecross-sections of the holes in the zone 508 is from about 800 mm2 toabout 1000 mm2. The summation of the areas of the cross-sections of theholes in the zone 510 is from about 200 mm2 to about 300 mm2.

FIG. 6 illustrates a top view of a showerhead 600 of the apparatus 400according to an example implementation of the present disclosure. Asillustrated in FIG. 6 , the showerhead 600 differs from the showerhead500 in that the showerhead 600 is divided into three zones 610, 612,614, each of which is formed with a plurality of holes. The zone 610 isat a first side of the showerhead 600. The zone 614 is at a second sideof the showerhead 600 opposite the first side of the showerhead 600. Thezone 612 is between the zones 610, 614. The zones 610, 612 define afirst interface 604 therebetween. In various implementations, the firstinterface 604 is arcuate. In other implementations, the first interface604 is straight. The zones 612, 614 define a second interface 606therebetween. In various implementations, the second interface 606 isarcuate. In other implementations, the second interface 606 is straight.In this example implementation, the second interface 606 has a longerlength than the first interface 604. In various implementations, thesecond interface 606 has substantially the same length as the firstinterface 604. In other implementations, the second interface 606 has ashorter length than the first interface 604.

In this example implementation, the sizes (e.g., widths or diameters) ofthe holes in the zone 610 are identical to each other. The sizes (e.g.,widths or diameters) of the holes in the zone 612 are identical to eachother. The sizes (e.g., widths or diameters) of the holes in the zone614 are identical to each other.

In this example implementation, the center 618 of the showerhead 600 isinside the zone 612. In various implementations, the center 618 of theshowerhead 600 is inside the zone 610. In other implementations, thecenter 618 of the showerhead 600 is inside the zone 614. The size of theholes in the zone 614 is larger than the size of the holes in the zone612. The size of the holes in the zone 612 is larger than the size ofthe holes in the zone 610. For example, the size of the holes in thezone 610 is from about 0.68 mm to about 0.72 mm. The term “about” means±0.02 mm. The size of the holes in the zone 612 is from about 0.72 mm toabout 0.74 mm. The term “about” means ±0.02 mm. The size of the holes inthe zone 614 is from about 0.74 mm to about 0.76 mm. The term “about”means ±0.02 mm.

In this example implementation, the area of the zone 610 is larger thanthe area of the zones 612, 614. The area of the zone 614 is larger thanthe area of the zone 612. In other implementations, the area of the zone614 is substantially equal to the area of the zone 612. In variousimplementations, the open area of the zone 610 is from about 700 mm2 toabout 900 mm2. The open area of the zone 612 is from about 100 mm2 toabout 200 mm2. The open area of the zone 614 is from about 200 mm2 toabout 300 mm2. The term “open area” means how much of the area isoccupied by the holes. In various implementations, each of the holes hascross-sections (e.g., a circular cross-section). The summation of theareas of the cross-sections of the holes in the zone 610 is from about700 mm2 to about 900 mm2. The summation of the areas of thecross-sections of the holes in the zone 612 is from about 100 mm2 toabout 200 mm2. The summation of the areas of the cross-sections of theholes in the zone 614 is from about 200 mm2 to about 300 mm2.

FIG. 7 illustrates an apparatus 700 for processing a substrate 704according to an example implementation of the present disclosure. Asillustrated in FIG. 7 , the apparatus 700 includes a processing chamber702, a substrate support 706 (e.g., a chuck) positioned in a bottom or asubstrate processing zone of the processing chamber 702 and configuredto support a substrate 704 thereon, a gas inlet 708 coupled to a topsurface 718 of the processing chamber 702 for permitting gas (such asphosphine, phosphorous) to flow therethrough, and a showerhead 710placed under the gas inlet 708. The top surface 718 of the processingchamber 702 has opposite first and second end portions 720, 722 and amiddle portion 724 between the first and second end portions 720, 722.The apparatus 700 differs from the apparatus 100 and the apparatus 400in that the gas inlet 708 of the apparatus 700 is mounted between themiddle portion 724 and the end portion 720 of the top surface 718 of theprocessing chamber 702. A first processing gas 712 may flow from a gassource (not shown), through the gas inlet 708, and to the showerhead 710such that the first processing gas 712 is unevenly distributed over theshowerhead 710. That is, the amount of the first processing gas 712flowing to the showerhead 710 is larger at a location between a centerand an edge of the showerhead 710 than the center of the showerhead 710.

The showerhead 710 includes a plurality of through holes 716 that allowsa first processing gas 712 to flow therethrough. A second processing gas714 flows from the showerhead 710 and is distributed over a substrate704 when the first processing gas 712 flows through the showerhead 710.As will be described below, the showerhead 710 of the present disclosurepermits even distribution of the second processing gas 714 (such asphosphine, phosphorous) over the substrate 704, allowing a film (e.g.,BSPG or PSG) with a substantially uniform thickness to be formed on thesubstrate 704.

In various implementations of the present disclosure, the showerhead 710of the apparatus 700 is divided into different zones and the sizes(e.g., widths or diameters) of the holes or channels 716 in theshowerhead 710 vary from one zone to another. For example, theshowerhead 710 may be divided into a first zone at a first side of theshowerhead 710 and a second zone at a second side of the showerhead 710opposite the first side of the showerhead. The holes 716 in the firstzone of the showerhead 710 may have a smaller hole size than the holesin the second zone of the showerhead 710, allowing an even distributionof the second processing gas 714 flowing from the showerhead 710 overthe substrate 704.

FIG. 8 illustrates a top view of a showerhead 800 of the apparatus 700according to an example implementation of the present disclosure. Asillustrated in FIG. 8 , the holes in the showerhead 800 are grouped intoa zone 808 at a first side of the showerhead 800 and a zone 810 at asecond side of the showerhead 800 opposite the first side of theshowerhead 800. The zones 808 and 810 define an interface 804therebetween. In various implementations, the interface 804 is arcuate.In other implementations, the interface 804 is straight.

In this example implementation, the sizes (e.g., widths or diameters) ofthe holes in the zone 808 are identical to each other. The sizes (e.g.,widths or diameters) of the holes in the zone 810 are identical to eachother. The holes in the zone 810 have a larger hole size than the holesin the zone 808. For example, the size of the holes in the zone 808 isfrom about 0.68 mm to about 0.72 mm. The term “about” means ±0.02 mm.

In this example implementation, the center 814 of the showerhead 800 isinside the zone 808. In an alternative implementation, the center 814 ofthe showerhead 800 is inside the zone 810. The size of the holes in thezone 810 is from about 0.72 mm to about 0.74 mm. The term “about” means±0.02 mm. In this example implementation, the area of the zone 808 islarger than the area of the zone 810. In various implementations, theopen area of the zone 808 is from about 800 mm2 to about 1000 mm2. Theopen area of the zone 810 is from about 200 mm2 to about 300 mm2. Theterm “open area” means how much of the area is occupied by the holes. Invarious implementations, each of the holes has cross-section (e.g., acircular cross-section). The summation of the areas of thecross-sections of the holes in the zone 808 is from about 800 mm2 toabout 1000 mm2. The summation of the areas of the cross-sections of theholes in the zone 810 is from about 200 mm2 to about 300 mm2.

FIG. 9 illustrates a top view of a showerhead 900 of the apparatus 700according to an example implementation of the present disclosure. Asillustrated in FIG. 9 the showerhead 900 differs from the showerhead 800in that the showerhead 900 is divided into three zones 910, 912, 914,each of which is formed with a plurality of holes. The zone 910 is at afirst side of the showerhead 900. The zone 914 is at a second side ofthe showerhead 900 opposite the first side of the showerhead 900. Thezone 912 is between the zones 910, 914. The zones 910, 912 define afirst interface 904 therebetween. The zones 912, 914 define a secondinterface 906 therebetween. In various implementations, the first/secondinterface 904/906 is arcuate. In other implementations, the first/secondinterface 906 is straight. In this example implementation, the secondinterface 906 has a longer length than the first interface 904. Invarious implementations, the second interface 906 has substantially thesame length as the first interface 904. In other implementations, thesecond interface 906 has a shorter length than the first interface 904.

In this example implementation, the sizes (e.g., widths or diameters) ofthe holes in the zone 910 are identical to each other. The sizes (e.g.,widths or diameters) of the holes in the zone 912 are identical to eachother. The sizes (e.g., widths or diameters) of the holes in the zone914 are identical to each other.

In this example implementation, the center 918 of the showerhead 900 isinside the zone 910. In various implementations, the center 918 of theshowerhead 900 is inside the zone 912. In other implementations, thecenter 918 of the showerhead 900 is inside the zone 914. The size of theholes in the zone 914 is larger than the size of the holes in the zone912. The size of the holes in the zone 912 is larger than the size ofthe holes in the zone 910. For example, the size of the holes in thezone 910 is from about 0.68 mm to about 0.72 mm. The term “about” means±0.02 mm. The size of the holes in the zone 912 is from about 0.72 mm toabout 0.74 mm. The term “about” means ±0.02. The size of the holes inthe zone 914 is from about 0.74 mm to about 0.76 mm. The term “about”means ±0.02 mm.

In this example implementation, the area of the zone 910 is larger thanthe area of the zones 912, 914. The area of the zone 914 is larger thanthe area of the zone 912. In other implementations, the open area of thezone 914 is substantially equal to the open area of the zone 912. Invarious implementations, the open area of the zone 910 is from about 700mm² to about 900 mm². The open area of the zone 912 is from about 100mm² to about 200 mm². The open area of the zone 914 is from about 200mm² to about 300 mm². The term “open area” means how much of the area isoccupied by the holes. In various implementations, each of the holes hascross-sections (e.g., a circular cross-section). The summation of theareas of the cross-sections of the holes in the zone 910 is from about700 mm² to about 900 mm². The summation of the areas of thecross-sections of the holes in the zone 912 is from about 100 mm² toabout 200 mm². The summation of the areas of the cross-sections of theholes in the zone 914 is from about 200 mm² to about 300 mm².

In various implementations, the sizes, i.e., widths or diameters, of theholes of the showerhead of the present disclosure may linearly orexponentially increases from the showerhead center to the showerheadedge. In certain implementations, the sizes, i.e., widths or diametersof the holes of the showerhead of the present disclosure may linearly orexponentially increases from the showerhead edge to the showerheadcenter. In other implementations, the holes of the showerhead of thepresent disclosure may be grouped, each of which has a distinct holesize.

FIG. 11 is a flowchart illustrating a method 1100 for processing asubstrate according to an example implementation of the presentdisclosure. The method 1100 begins with block 1102 in in which asubstrate is provided. The method 1100 continues with block 1104 inwhich a first processing gas is received in a processing chamber. Themethod 1100 continues with block 1106 in which the first processing gasis unevenly distributed over a showerhead. The method 1100 continueswith block 1108 in which a second processing gas is evenly distributedover the substrate.

In various implementations for the method 1100, the showerhead includesa plurality of through holes in two or more zones of the showerhead thatallow a first processing gas to flow therethrough. The sizes (e.g.,widths or diameters) of the holes in the showerhead are varied from onezone to another.

In various implementations for the method 1100, the holes in theshowerhead are grouped into two or more zones (e.g., a first zone and asecond zone). The holes in the second zone may be configured to have alarger size, i.e., width or diameter, than the holes in the first zone.For example, the size of the holes in the first zone is from about 0.68mm to about 0.72 mm. The term “about” means ±0.02 mm. The size of theholes in the second zone is from about 0.72 mm to about 0.74 mm. Theterm “about” means ±0.02. The open area of the first zone is from about800 mm² to about 1000 mm². The open area of the second zone is fromabout 200 mm² to about 300 mm². The term “open area” means how much ofthe area is occupied by the holes. In various implementations, each ofthe holes has cross-sections (e.g., a circular cross-section). Thesummation of the areas of the cross-sections of the holes in the firstzone is from about 800 mm² to about 1000 mm². The summation of the areasof the cross-sections of the holes in the second zone is from about 200mm² to about 300 mm².

In various implementations for the method 1100, the showerhead is atriple zone type showerhead. That is, the showerhead has first, second,and third zones, each of which has a plurality of holes. The sizes(e.g., widths or diameter) of the holes in the first zone is differentfrom the sizes of the holes in the second and third zones. The size ofthe holes in the second zone is different from the size of the holes inthe third zone. In various implementations, the size of the holes in thethird zone is larger than the size of the holes in the second zone. Thesize of the holes in the second zone is larger than the size of theholes in the first zone. For example, the size of the holes in the firstzone is from about 0.68 mm to about 0.72 mm. The term “about” means±0.02 mm. The size of the holes in the second zone 312 is from about0.72 mm to about 0.74 mm. The term “about” means ±0.02. The size of theholes in the third zone is from about 0.74 mm to about 0.76 mm. The term“about” means ±0.02. The open area of the first zone is from about 700mm² to about 900 mm². The open area of the second zone is from about 100mm² to about 200 mm². The open area of the third zone is from about 200mm² to about 300 mm². The term “open area” means how much of the area isoccupied by the holes. In various implementations, each of the holes hascross-sections (e.g., a circular cross-section). The summation of theareas of the cross-sections of the holes in the first zone is from about700 mm² to about 900 mm². The summation of the areas of thecross-sections of the holes in the second zone is from about 100 mm² toabout 200 mm². The summation of the areas of the cross-sections of theholes in the third zone is from about 200 mm² to about 300 mm².

In an implementation of the present disclosure, an apparatus forprocessing a substrate is provided. The apparatus comprises a processingchamber and a showerhead. The showerhead is in the processing chamberand has a plurality of first holes with a first size in a first zone ofthe showerhead and a plurality of second holes with a second hole sizein a second zone of the showerhead. The first hole size is differentfrom the second hole size. The first zone is surrounded by the secondzone. An area of the first zone is larger than an area of the secondzone.

In another implementation of the present disclosure, an apparatus forprocessing a substrate is provided. The apparatus comprises a processingchamber and a showerhead. The showerhead is in the processing chamberand has a plurality of first holes in a first zone of the showerhead anda plurality of second holes in a second zone of the showerhead. Thesecond holes are larger than the first holes. An area of the first zoneis larger than an area of the second zone. The first zone and the secondzone define an arcuate interface therebetween.

In another implementation of the present disclosure, a method comprisesreceiving a first processing gas through a gas inlet, unevenlydistributing the first processing gas over a showerhead, and evenlydistributing a second processing gas over a substrate flowing from theshowerhead.

The implementations shown and described above are only examples. Manydetails are often found in the art such as the other features of aradiation measurement panel and device. Therefore, many such details areneither shown nor described. Even though numerous characteristics andadvantages of the present technology have been set forth in theforegoing description, together with details of the structure andfunction, the disclosure is illustrative only, and changes may be madein the detail, especially in matters of shape, size, and arrangement ofthe parts within the principles, up to and including the full extentestablished by the broad general meaning of the terms used in theclaims. It will therefore be appreciated that the implementationsdescribed above may be modified within the scope of the claims.

What is claimed is:
 1. A gas distribution method comprising: receiving afirst processing gas through a gas inlet; unevenly distributing thefirst processing gas over a showerhead; flowing the first processing gasthrough a plurality of holes in the showerhead, wherein the plurality ofholes are grouped into a first zone of the showerhead and a second zoneof the showerhead, the holes in the second zone have a larger hole sizethan the holes in the first zone, and the hole diameter of the holes inthe first zone is from about 0.66 mm to about 0.74 mm; and evenlydistributing a second processing gas over a substrate flowing from theshowerhead.
 2. The method of claim 1, wherein the hole diameter of theholes in the second zone is from about 0.74 mm to about 0.76 mm.
 3. Themethod of claim 1, wherein a width of the first zone is from about 210mm to about 250 mm.
 4. The method of claim 1, wherein the second zonehas a first width at a first side of the first zone, and a second widthat a second side of the first zone opposite the first side of the firstzone and different from the first width.
 5. The method of claim 1,wherein the first zone is surrounded by the second zone.
 6. The methodof claim 1, wherein a center of the showerhead is in the first zone. 7.The method of claim 1, wherein the showerhead further has a plurality ofthird holes in a third zone of the showerhead and larger than the secondholes.
 8. The method of claim 1, wherein the showerhead further has aplurality of third holes in a third zone of the showerhead and an areaof the third zone is larger than the area of the second zone.
 9. Themethod of claim 1, wherein an open area of the first zone is from about800 mm² to about 1000 mm², and an open area of the second zone is fromabout 200 mm² to about 300 mm².
 10. The method of claim 1, wherein aninterface between the first zone and the second zone is circular,polygonal, arcuate or straight.